Wide Bandgap Light Emitting Materials And Devices
by Neumark, Gertrude F.; Kuskovsky, Igor L.; Jiang, HongxingEdition: 1st
Format: Hardcover
Pub. Date: 2007-10-01
Publisher(s): Wiley-VCH
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Summary
Wide bandgap light emitters include laser diodes and light-emitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics. This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research : III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.
Author Biography
G.F. Neumark and I.L. Kuskovxky, Columbia University <p> H. Jiang, Kansas State University <p> M.C. Tamargo, City college of CUNY <p> N.M. Johnson, Xerox Corporation <p> T. Moustaka, Boston University <p> K. Katayama, Sumitomo Electric <p> nce (Arizona State University)
Table of Contents
| III–Nitride Light-Emitting Diodes on Novel Substrates (Xian-An Cao) | |
| Introduction | |
| LEDs on Sapphire Substrates | |
| LED Heteroepitaxy | |
| Current Spreading | |
| Carrier Transport | |
| Carrier Con. nement and Localization | |
| Radiative and Nonradiative Recombination | |
| Light Extraction | |
| LEDs on SiC Substrates | |
| LEDs on Si Substrates | |
| LED Homoepitaxy | |
| Electrical Characteristics | |
| Optical Characteristics | |
| High-Current Operation | |
| LEDs on Other Novel Substrates | |
| Conclusions.References | |
| III–Nitride Microcavity Light Emitters | |
| Introduction | |
| III–Nitride Microstructure Fabrication | |
| Microstructure Fabrication by Photolithography Patterning and Plasma Dry Etching | |
| Microscale Pyramids and Prisms Fabricated by Selective Epitaxial Overgrowth | |
| Submicron Waveguides | |
| Optical Studies of III–Nitride Microstructures | |
| Microdisks | |
| Microrings | |
| Micropyramids | |
| Optical Properties | |
| Pyramidal Microcavities | |
| Submicron Quantum-Well Waveguides | |
| Optically Pumped Vertical-Cavity Surface-Emitting Laser Structures | |
| Current-Injection Microcavity Light-Emitting Diodes | |
| Microdisk Cavity LEDs | |
| Vertical-Cavity Surface-Emitting LEDs | |
| III–Nitride Microscale LED Applications | |
| Interconnected Microdisk LEDs for Boosting LED Emission Efficiencies | |
| Nitride Microdisplays | |
| III–Nitride Photonic Crystals | |
| Concluding Remarks.References | |
| Nitride Emitters – Recent Progress (Tao Wang) | |
| Introduction | |
| Ultraviolet Emitters | |
| Ultraviolet LEDs Based on GaN Buffer Technology | |
| Ultraviolet LEDs Based on GaN-Free Technology | |
| Ultraviolet Lasers | |
| InGaN-Based Emitters | |
| Nonpolar and Semipolar III–Nitride Emitters | |
| Summary.References | |
| Part II | |
| ZnSeTe Rediscovered: From Isoelectronic Centers to Quantum Dots | |
| Introduction | |
| Sample Growth | |
| Structural Properties | |
| Optical Properties | |
| Dilute Bulk ZnSe 1-x Te x Alloys | |
| 4.4.2 ¿-ZnSe:Te | |
| ¿3-ZnSe:Te.4 | |
| Type-II Quantum Dots | |
| Coexistence of Type-II Quantum Dots and Isoelectronic Centers | |
| Controlling Quantum Dot Size by Varying Growth Conditions | |
| Magneto-PL of Type-II QDs: Aharonov–Bohm Effect and QD Size | |
| Summary | |
| References | |
| Optical Properties of ZnO Alloys | |
| Introduction. | |
| Index of Refraction of ZnO | |
| Excitonic Features of ZnO | |
| Electric Field Effects on Excitons | |
| Photoluminescence | |
| ZnO Alloys | |
| References | |
| Index | |
| Table of Contents provided by Publisher. All Rights Reserved. |
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